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   DHG 20 I 1200 PA preliminary 200 300 400 500 600 700 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 Qrr [μC] IF [A] VF [V] diF/dt [A/μs] TVJ =125°C TVJ = 25°C TVJ=125°C VR = 600 V 10 A 20 A 40 A Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrrvs. di/dt 200 300 400 500 600 700 0 5 10 15 20 25 30 35 IRM [A] diF/dt [A/μs] TVJ= 125°C VR =600V 10 A 20 A 40 A Fig. 3 Typ. peak reverse current IRM vs. di/dt 200 300 400 500 600 700 0 100 200 [ns] 300 400 500 600 700 trr diF/dt [A/μs] 10 A 20 A 40 A TVJ = 125°C VR =600 V Fig. 4 Typ. recovery time trrversus di/dt Fig. 5 Typ. recovery energy Erec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Erec [mJ] diF/dt [A/μs] TVJ=125°C VR = 600 V 10 A 20 A 40 A 0.001 0.01 0.1 1 10 0.1 1 tp [s] ZthJC [K/W] Fig. 6 Typ. transient thermal impedance Ri t i 1 0.231 0.0005 2 0.212 0.004 3 0.19 0.02 4 0.267 0.15 IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110616a Data according to IEC 60747and per diode unless otherwise specified |